Kelvin probe force microscopy work function characterization of transition metal oxide crystals under ongoing reduction and oxidation

• Dominik Wrana,
• Karol Cieślik,
• Wojciech Belza,
• Christian Rodenbücher,
• Krzysztof Szot and
• Franciszek Krok

Beilstein J. Nanotechnol. 2019, 10, 1596–1607, doi:10.3762/bjnano.10.155

• , this is a first indirect observation of the high potential of such a structure. After in situ annealing to 230 °C, the work function of TiO nanowires drops by 0.2 eV, in contrast to the 0.35 eV decrease for the SrTiO3(100) surface. A temperature of 230 °C was chosen to enable desorption of the most

Integration of LaMnO_3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

• Raquel Rodriguez-Lamas,
• Dolors Pla,
• Odette Chaix-Pluchery,
• Benjamin Meunier,
• Fabrice Wilhelm,
• Andrei Rogalev,
• Laetitia Rapenne,
• Xavier Mescot,
• Quentin Rafhay,
• Hervé Roussel,
• Michel Boudard,
• Carmen Jiménez and
• Mónica Burriel

Beilstein J. Nanotechnol. 2019, 10, 389–398, doi:10.3762/bjnano.10.38

• and 5 Torr; III) two-step strategy scheme. Representation of the range of appropriate deposition conditions. Maximum temperature used versus time of exposure to temperatures above 500 °C. Red squares stand for single step strategy (strategy I), blue triangles for single step strategy with in situ

• annealing (strategy II). Green circles stand for double step strategy (strategy III). Data in the green shadowed area correspond to successfully grown dense and homogeneous LMO films without instability issues. The red shadowed region corresponds to films with Pt instability problems. Purple area

Metal-free catalysis based on nitrogen-doped carbon nanomaterials: a photoelectron spectroscopy point of view

• Mattia Scardamaglia and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2018, 9, 2015–2031, doi:10.3762/bjnano.9.191

• valence band (VB) spectra with high energy resolution [58]. They correlated the change in the DOS to the different types of nitrogen functionalities incorporated in the carbon matrix, using X-ray photoemission spectroscopy and in situ annealing. Specifically, it was shown that through annealing at

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

• Silvia Vangelista,
• Rossella Piagge,
• Satu Ek and
• Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

• ; in situ annealing; transmission electron microscopy; X-ray diffraction; Introduction Cerium dioxide (CeO2) has raised renewed interest in the recent years in many fields of research thanks to its properties, such as the ability to store and release oxygen, or its chemical stability [1][2]. For many

Growth, structure and stability of sputter-deposited MoS₂ thin films

• Reinhard Kaindl,
• Bernhard C. Bayer,
• Roland Resel,
• Thomas Müller,
• Viera Skakalova,
• Gerlinde Habler,
• Rainer Abart,
• Alexey S. Cherevan,
• Dominik Eder,
• Maxime Blatter,
• Fabian Fischer,
• Jannik C. Meyer,
• Dmitry K. Polyushkin and
• Wolfgang Waldhauser

Beilstein J. Nanotechnol. 2017, 8, 1115–1126, doi:10.3762/bjnano.8.113

• . The laser power was selected by neutral density filters and calibrated using a power-meter. The laser spot diameter is estimated to ≈2 µm. The in situ annealing Raman experiments were conducted in ambient atmosphere (23 °C, 30% humidity). X-ray reflectivity (XRR) and specular diffraction (XRD) X-ray

• largely unchanged for the 400 °C film upon 3.5 mW irradiation, with only some increase in the E12g FWHM. Additionally, no surface damage is visible in the corresponding microscopic image. This suggests that the 400 °C deposited nanocrystalline MoS2 remains comparatively stable under these in situ

• annealing conditions. Our in situ laser annealing experiments therefore show that the amorphous MoS2 films deposited at RT are very unstable and easily oxidized upon increased energy input in ambient air whereas nanocrystalline films deposited at 400 °C remain comparatively stable in ambient conditions when

Nitrogen-doped twisted graphene grown on copper by atmospheric pressure CVD from a decane precursor

• Ivan V. Komissarov,
• Nikolai G. Kovalchuk,
• Vladimir A. Labunov,
• Ksenia V. Girel,
• Olga V. Korolik,
• Mikhail S. Tivanov,
• Algirdas Lazauskas,
• Mindaugas Andrulevičius,
• Tomas Tamulevičius,
• Viktoras Grigaliūnas,
• Šarunas Meškinis,
• Sigitas Tamulevičius and
• Serghej L. Prischepa

Beilstein J. Nanotechnol. 2017, 8, 145–158, doi:10.3762/bjnano.8.15

• the catalyst consumption, followed by underside contaminant cleaning, then placement on the destination substrate. However, the PMMA removal from the graphene after the film transfer (which involves high-temperature Ar/H2 forming gas annealing [18], O2-based annealing [19], and in situ annealing [20

High-resolution noncontact AFM and Kelvin probe force microscopy investigations of self-assembled photovoltaic donor–acceptor dyads

• Benjamin Grévin,
• Pierre-Olivier Schwartz,
• Laure Biniek,
• Martin Brinkmann,
• Nicolas Leclerc,
• Elena Zaborova and
• Stéphane Méry

Beilstein J. Nanotechnol. 2016, 7, 799–808, doi:10.3762/bjnano.7.71

• investigated in dark conditions and upon illumination. The topographic and contact potential difference (CPD) images taken under dark conditions are analysed in view of the results of complementary transmission electron microscopy (TEM) experiments. After in situ annealing, it is shown that the dyads with

• beam was blanked with a shutter and a nearby area was selected to record the HRTEM image. Image treatment was performed by using the AnalySIS software (Soft Imaging System). Results and Discussion Surface morphology Figure 4a,b shows the surface morphology of AD1 and AD3 films after in situ annealing

Orientation of FePt nanoparticles on top of a-SiO₂/Si(001), MgO(001) and sapphire(0001): effect of thermal treatments and influence of substrate and particle size

• Martin Schilling,
• Paul Ziemann,
• Zaoli Zhang,
• Johannes Biskupek,
• Ute Kaiser and
• Ulf Wiedwald

Beilstein J. Nanotechnol. 2016, 7, 591–604, doi:10.3762/bjnano.7.52

• coalescence, growth or Ostwald ripening by annealing can be completely avoided [15]. In the present study we investigate the possibility of a structural (re)orientation of FePt NPs and thin films on a-SiO2/Si(001), MgO(001), and sapphire(0001) after different in situ annealing steps by HRTEM and RHEED

• ambient temperature. The RHEED pattern after reduction at 240 °C for 30 min in a hydrogen plasma is presented in Figure 7a already revealing the formation of RHEED streaks. This indicates the existence of smooth textured domains and a low surface roughness. After subsequent in situ annealing steps of 30

• particles are well separated in a hexagonal arrangement. The height histogram shows the size distribution centered at 2.7 nm. Experimental results of the preferred orientations of FePt nanoparticles on various substrates after particle reduction and in situ annealing. The last column summarizes the

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

• Aleksandra Szkudlarek,
• Alfredo Rodrigues Vaz,
• Yucheng Zhang,
• Andrzej Rudkowski,
• Czesław Kapusta,
• Rolf Erni,
• Stanislav Moshkalev and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1508–1517, doi:10.3762/bjnano.6.156

• agreement with the value of 150 °C deduced from in situ four-point-probe resistance measurements of a gold wire deposited by e-beam lithography and PVD metal lift-off together with the pre-structure of the four-point electrodes. TEM in situ annealing of FEBID deposits from Cu(hfac)2 was performed with a

• precipitate. The inset shows the SAD pattern of Cu fcc nanocrystals. TEM in situ annealing of FEBID rods grown from (hfac)Cu(VTMS). a) Dark field image of an as-deposited freestanding rod. Inset: rod apex with small Cu nanocrystals in carbonaceous matrix. b) Bright-field image of same rod after 270 °C

Surface passivation and optical characterization of Al₂O₃/a-SiC_x stacks on c-Si substrates

• Gema López,
• Pablo R. Ortega,
• Cristóbal Voz,
• Isidro Martín,
• Mónica Colina,
• Anna B. Morales,
• Albert Orpella and
• Ramón Alcubilla

Beilstein J. Nanotechnol. 2013, 4, 726–731, doi:10.3762/bjnano.4.82

• parameter. Values close to 10 cm/s were achieved on polished n- and p-type samples. This effect can be attributed to a small in-situ annealing effect that takes place in the PECVD chamber (deposition temperature Tdep= 300 °C). The improvement of the passivation quality after an annealing step has been

Focused electron beam induced deposition: A perspective

• Michael Huth,
• Fabrizio Porrati,
• Christian Schwalb,
• Marcel Winhold,
• Roland Sachser,
• Maja Dukic,
• Jonathan Adams and
• Georg Fantner

Beilstein J. Nanotechnol. 2012, 3, 597–619, doi:10.3762/bjnano.3.70

• . Che et al. reported on FEBID of FePt nanopillar structures by using Fe(CO)5 and Me3Pt(IV)CpMe as precursor gases in parallel [27]. The originally amorphous deposits were shown to crystallize into the L10 “face-centered tetragonal” structure of FePt after an in situ annealing step at 600 °C. The

Nanoscaled alloy formation from self-assembled elemental Co nanoparticles on top of Pt films

• Luyang Han,
• Ulf Wiedwald,
• Johannes Biskupek,
• Kai Fauth,
• Ute Kaiser and
• Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 473–485, doi:10.3762/bjnano.2.51

• used for preservation in ambient conditions after in-situ annealing. Contrary to XMCD, SQUID magnetometry measures the total magnetic moment of the sample, i.e., the NPs, the paramagnetic Pt film, the SiO protective layer and the diamagnetic MgO(100) substrate. Usually the magnetic response of the